In conjunction with Powerex, Inc and the United States Air Force Research Laboratory, Cree has introduced a demonstration model of a new silicon-carbide power switch featuring Cree’s silicon carbide semiconductors. The switch is capable of operating at temperatures of up to 200 degrees Celsius.

MSNBC has more on the advantages and potential applications of the new power switch:

When compared to a silicon IGBT module of equal rating, and operating at a junction temperature of 150 degrees Celsius, the SiC MOSFET-based module has 38 percent lower conduction losses and 60 percent lower switching losses for a total power-loss reduction of 54 percent when operated at 20 kHz. The combination of both low conduction and switching losses make this module ideal for any application where high efficiency is critical-such as solar energy power inverters and electric drives, and power conversion for hybrid and electric vehicles.